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设计了一种新型的980 nm底发射光抽运垂直外腔面半导体激光器(OPS-VECSEL),对比分析计算了器件在单个谐振周期内不同量子阱数目下的性能。得到了在单阱条件下,阈值光功率密度为5 kW/cm2时,输出功率超过1.8 W,斜率效率超过40%的优异性能。
A new type of 980 nm bottom emission optical pumping vertical external cavity semiconductor laser (OPS-VECSEL) was designed and the performance of the device under different quantum wells in a single resonant period was calculated and compared. Under the single-well condition, the output power exceeds 1.8 W and the slope efficiency exceeds 40% when the threshold optical power density is 5 kW / cm2.