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中波与长波探测器的光电流及动态输出阻抗存在数量级的差别。为满足积分时间及读出信号信噪比的要求,采用像元间多电容共享的方案,设计了一种高集成度的320×256双色红外焦平面读出电路。该电路选用直接注入(DI)结构作为中波输入级,而长波输入级则选用了缓冲注入(BDI)结构。其缓冲放大器采用单边结构,具有高增益、低功耗、低噪声的特点,降低了输入阻抗,提高了注入效率。基于HHNEC 0.35μm 2P4M标准CMOS工艺,完成了芯片的设计与制造。经测试,引入电容共享方案后其有效电荷容量达到70 Me-/像元,电路各项功能正常,在光照条件下,芯片呈现出高的灵敏性。在2.5 MHz读出速率下,中波及长波输出电压范围均大于2 V,非线性小于1%。在100 f/s帧频下,整体功耗小于170 m W。
There is an order of magnitude difference between the photocurrent and the dynamic output impedance of medium-wave and long-wave detectors. In order to meet the integration time and read the signal to noise ratio requirements, the use of multi-cell pixel sharing scheme, designed a highly integrated 320 × 256 two-color infrared focal plane readout circuit. The circuit uses direct injection (DI) structure as the medium-wave input stage, while the long-wave input stage uses a buffer injection (BDI) structure. The buffer amplifier with unilateral structure, with high gain, low power consumption, low noise characteristics, reducing the input impedance and improve the injection efficiency. Based on the HHNEC 0.35μm 2P4M standard CMOS process, the chip design and manufacturing were completed. After testing, the introduction of capacitive sharing scheme, the effective charge capacity of 70 Me- / pixel, the circuit function is normal, in the light conditions, the chip showed high sensitivity. At the 2.5 MHz readout rate, the medium and longwave output voltage ranges are both greater than 2 V and the non-linearity is less than 1%. At 100 f / s frame rate, the overall power consumption is less than 170 mW.