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建立一套基于超高真空俄歇电子能谱的原位加热系统,对GaN薄膜进行热效应研究．随着温度的增加,Ga LMM和Ga MVV的动能减小．利用第一性原理计算,获得理论的GaMVV俄歇谱.加热过程由于晶格热膨胀以及表面原子再构引起价电子态密度发生变化,从而导致价带俄歇谱负移．
A set of in-situ heating system based on Auger Auger electron spectroscopy was established to study the thermal effect of GaN thin films. As the temperature increases, the kinetic energy of Ga LMM and Ga MVV decreases. The theoretical GaMVV Auger spectrum is obtained by the first-principles calculations.The valence electron state density changes due to the thermal expansion of the lattice and the surface atomic recombination, resulting in the negative shift of the Auger Auger spectrum.