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对氧化层厚度为 4和 5 nm的 n- MOSFETs进行了沟道热载流子应力加速寿命实验 ,研究了饱和漏电流在热载流子应力下的退化 .在饱和漏电流退化特性的基础上提出了电子流量模型 ,此模型适用于氧化层厚度为 4— 5 nm或更薄的器件
The channel hot carrier stress accelerated lifetimes of n-MOSFETs with oxide layer thicknesses of 4 and 5 nm were studied, and the degradation of saturated leakage current under hot carrier stress was studied. Based on the degradation characteristics of saturated leakage current An electronic flow model is proposed. This model is suitable for devices with an oxide layer thickness of 4 to 5 nm or less