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上一讲介绍了半导体磁敏电阻及强磁性金属薄膜磁敏电阻的结构、工作原理和特性。本讲将着重介绍这两种器件组成的各类磁传感器的具体应用。一、位移测量 1.半导体磁敏电阻构成的位移传感器利用磁场外磁敏电阻的相对位移所引起磁敏电阻值的变化可精确地检测位移。图1所示的磁变阻器是由磁钢和半导体磁敏电阻构成的一种结构简单的位移传感器。图中所用的半导体磁敏电阻具有带狭缝的匚型结构。并将其固定,磁钢采用等强度的均匀磁钢,当磁钢如图向右移动X时,由于半导体磁敏电阻感受到感应强度增大,其阻值也会相应的增加。此种磁变阻器具有位移传感器的特性,即R(X)/R(l)和X=b/l的关系如图1所示。这
The last lecture introduced the structure, working principle and characteristics of semiconductor magnetoresistance and ferromagnetic metal thin film magnetoresistor. This talk will highlight the specific applications of the various types of magnetic sensors that make up these two devices. First, the displacement measurement 1. Displacement sensor composed of semiconductor magnetoresistive sensor using the magnetic field outside the magnetoresistive resistance caused by the relative displacement of the magnetoresistive resistance value can accurately detect the displacement. The rheostat shown in FIG. 1 is a simple structure displacement sensor composed of a magnet and a semiconductor magnetoresistive. The semiconductor magnetoresistive resistor used in the figure has a stencil structure with slits. And the magnet is fixed with equal strength of the magnet. When the magnet moves to the right as X, the resistance increases due to the increase of the induction intensity of the magnetoresistive resistor. Such a magnetoresistive sensor has the characteristics of a displacement sensor, that is, R (X) / R (l) and X = b / l as shown in FIG. This