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A common base four-finger InGaAs/InP double heterojunction bipolar transistor with 535 GHz f_(max) by using the0.5 μm emitter technology is fabricated.Multi-finger design is used to increase the input current.Common base configuration is compared with common emitter configuration,and shows a smaller K factor at high frequency span,indicating a larger breakpoint frequency of maximum stable gain/maximum available gain(MSG/MAG)and thus a higher gain near the cut-off frequency,which is useful in THz amplifier design.
A common base four-finger InGaAs / InP double heterojunction bipolar transistor with 535 GHz f_ (max) by using the 0.5 μm emitter technology is fabricated. Multi-finger design is used to increase the input current. Common base configuration is compared with common emitter configuration, and shows a smaller K factor at high frequency span, indicating a larger breakpoint frequency of maximum stable gain / maximum available gain (MSG / MAG) and thus higher gain near the cut-off frequency, which is useful in THz amplifier design.