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本文给出了发射探针和电容探针测量等离子体电位的实验和方法。发射探针采用直流功率加热，并在较强电子发射条件下运行（Ｉ_（ｅ０）／Ｉ_（ｅ０）＞１）。电容探针表面二次电子发射系数δ≥１。本文对发射探针的电子发射性能、工作电流、电容探针的输入、输出电压关系进行了标定实验。得到了电容探针的校准系数分别为３×１０（－３）、５×１０（－４）。实验给出了ＭＭ－４会切中心等离子体电位Ｖ_（ｐ４）＝－８２±９－１２２±１２Ｖ；ＭＭ－４Ｕ东、西会切中心等离子体电位分别为Ｖ_（Ｐ４ｕ１）＝－５２．９±３．２Ｖ，Ｖ_（Ｐ４ｕ２）＝－６２±３．２Ｖ。
In this paper, experiments and methods of measuring the plasma potential of the emission probe and the capacitance probe are given. The emission probe is heated with direct current power and operated under strong electron emission (I_ (e0) / I_ (e0)> 1). Capacitance probe surface secondary electron emission coefficient δ ≥ 1. In this paper, the calibration experiment of the relationship between the electron emission performance of the emission probe, the working current, the input of the capacitance probe and the output voltage was carried out. The calibration coefficients of the capacitance probe are 3 × 10 (-3) and 5 × 10 (-4), respectively. The experiment shows that the plasma potential of MM-4 center is V_ (p4) = -82 ± 9-122 ± 12V. The plasma potentials at the center of the east and west of MM-4U are V_ (P4u1) = -52.9 ± 3.2V, V_ (P4u2) = -62 ± 3.2V.