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为实现垂直腔面发射半导体激光器(VCSEL)大功率窄线宽输出,设计了浅面浮雕矩形台面结构的垂直腔面发射激光器(SR VCSEL)。电流密度分布会影响模式的分布,模拟结果表明,矩形台面VCSEL相比于圆形台面VCSEL,在有源区面积增大的情况下,电流密度分布不变。在矩形台面VCSEL出光孔表面刻蚀浅面浮雕后,高阶模式比基模的阈值增益的变化大,基模对高阶模式的抑制增强。理论结果表明,矩形浅面浮雕结构的VCSEL能够实现对高阶模式的抑制,测试结果得到连续输出为5.87mW,光谱宽度为0.1nm,功率偏振度为10,横向模式抑制比超过30dB的窄线宽输出。
In order to realize high power narrow linewidth output of vertical cavity surface emitting semiconductor laser (VCSEL), a vertical cavity surface emitting laser (SR VCSEL) with a shallow relief mesa was designed. The current density distribution affects the pattern distribution. The simulation results show that the current density distribution of the rectangular mesas VCSEL is the same as that of the circular mesas VCSEL. After etching the shallow relief on the surface of the exit hole of the VCSEL, the variation of the threshold gain of the high-order mode is larger than that of the fundamental mode, and the suppression of the high-order mode by the fundamental mode is enhanced. The theoretical results show that the VCSEL with rectangular shallow relief structure can suppress the high-order mode. The test result shows that the narrow-line output of the model is 5.87mW, the spectral width is 0.1nm, the power polarization is 10 and the lateral mode rejection ratio is more than 30dB Wide output.