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Nitrogen doped amorphous carbon thin films are deposited on the ceramic substrates coated with Ti film by using direct current magnetron sputtering technique at N 2 and Ar gas mixture atmosphere during deposition. The field emission properties of the deposited films have been investigated. The threshold field as low as 5.93 V/μm is obtained and the maximum current density increases from 4 μA/cm 2 to 20.67 μA/cm 2 at 10.67 V/μm comparing with undoped amorphous film. The results show that nitrogen doping plays an important role in field emission of amorphous carbon thin films.
The field emission properties of the deposited films have been investigated. The threshold field as low as 5.93 V / μm was obtained and the maximum current density increases from 4 μA / cm 2 to 20.67 μA / cm 2 at 10.67 V / μm compared with undoped amorphous film. The results show that nitrogen doping plays an important role in field emission of amorphous carbon thin films.