论文部分内容阅读
提出了一种在LiNbO3衬底背面沿垂直光传播方向的开槽结构的波导调制器,不仅可以通过开槽的方式替代通常LiNbO3基片和电极之间的SiO2缓冲层,起到减小驱动电压和抑制直流(DC)漂移的作用,而且由于其开槽部分和未开槽部分的截面图都比较规则,开槽部分又符合部分电容法的应用条件,在设计中可以避开有限元法(FEM)而采用施瓦兹-克里斯托弗耳(SC)变换进行计算。数值计算结果表明,在电极长度为40 mm的LiNbO3衬底上,开槽时选取开槽处的厚度为15μm,开槽宽度为38.5 mm,调制器调制带宽可以达到40.00 GHz,阻抗为63.10Ω。说明这种结构在没有SiO2缓冲层的情况下同样能够实现光波和微波的速度匹配,对于调制器的制作设计更加便利和精确。
A waveguide modulator with slotted structure along the vertical direction of light propagation is proposed on the back of LiNbO3 substrate. Not only the slot buffer can replace the SiO2 buffer layer between the LiNbO3 substrate and the electrode, but also reduce the driving voltage And inhibit the DC (DC) drift of the role, and because of its slotted and un-slotted section of the cross-sectional view is more rules, the slotted section and part of the capacitance method in accordance with the application conditions, the design can be avoided in the finite element method FEM) using the Schwartz-Christopher transformation (SC). The numerical results show that on the LiNbO3 substrate with an electrode length of 40 mm, the slot thickness is 15μm and the slot width is 38.5 mm. The modulation bandwidth of the modulator can reach 40.00 GHz and the impedance is 63.10Ω. It shows that this kind of structure can also match the speed of light wave and microwave without the SiO2 buffer layer, and it is more convenient and accurate to design the modulator.