本文介绍一种采用全离子注入的CMOS/双极兼容工艺制做的高压低阻值CMOS模拟开关.采用双层介质膜作为栅绝缘膜,可以大大降低导通电阻.在源漏区采用两次注入的办法,可以把栅—漏或栅—源之间的击穿电压从一般的25伏提高到80伏.这种模拟开关可工作在60伏以上,其导通电阻低于15Ω,非线性失真低于-70dB,通阻比大于80dB. This paper presents a high-voltage, low-resistance CMOS analog switch fabricated using a fully ion-implanted CMOS / bipolar compatible process using a dual-layer dielectric film as the gate insulating film that greatly reduces the on-resistance. The injection method can increase the breakdown voltage between the gate-drain or gate-source from 25 volts to 80 volts at most This analog switch can operate above 60 volts with an on-resistance of less than 15 Ω and a non-linearity Distortion below -70dB, through resistance than 80dB.