论文部分内容阅读
一、序言砷化镓中的 n 型杂质,已知的有 T_e、S、Si、Sn 等。在制作器件的时候,n 或 n~+层几乎都是采用外延生长法形成的。这是因为外延生长比扩散法温度低,并且可以制得优质的单晶(在300°K 下,μ=7000～8000厘米~2/伏秒,n=10~(14)～10~(15)厘米~(-3))。然而,在外延生长法中,用目前的技术要把 GaAs 外延层厚度控制为1～2μ重复性相当差。对单晶的要求不太严格时,用扩散法制备很薄的 n~+层是很有效的。有关 GaAs 中扩散的报告,谈的几乎都是 p 型杂质 Zn 的扩散。之所以致力研究 Zn扩散,是因为它可以在外延生长温度或更低的温度下进行。而用外延生长法很难制得优
First, the preamble GaAs in n-type impurities, known T_e, S, Si, Sn and so on. In the production of the device, n or n ~ + layer are almost all formed by epitaxial growth method. This is because the epitaxial growth is lower in temperature than the diffusion method, and excellent single crystal can be obtained (μ = 7000 to 8000 cm 2 / volt at 300 ° K, n = 10 to 14 to 10 to 15 ) Cm ~ (-3)). However, in the epitaxial growth method, it is quite poor to control the thickness of the GaAs epitaxial layer to 1~2 μ using the current technique. When the requirements for single crystals are less stringent, it is effective to fabricate very thin n ~ + layers by diffusion. The report on the proliferation of GaAs talks about almost all the diffusion of the p-type impurity Zn. The reason for devoting attention to Zn diffusion is that it can be performed at the epitaxial growth temperature or lower. The use of epitaxial growth method is difficult to obtain excellent