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报导了等离子体化学气相沉积（ＰＥＣＶＤ）法在锑化铟衬底上生长Ｓｉ３Ｎ４和ＳｉＯ２双层介质膜的实验技术。并用理化分析手段对膜层的物理化学性质进行了分析，给出了实验研究结果，提出了这种钝化工艺在红外探测器制备工艺中应用的可能性
The experimental technique for growing Si3N4 and SiO2 bilayer dielectric films on indium antimonide substrates by plasma chemical vapor deposition (PECVD) was reported. The physical and chemical properties of the film were analyzed by physical and chemical analysis, the experimental results were given, and the possibility of application of this passivation technology in the preparation of infrared detector was proposed