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Indium-tin-oxide(ITO)films with different sputtering time have been prepared by dc magnetron sputtering method on PET substrate at room temperature.The film structure,thickness,electrical and optical properties are investigated through XRD,SEM,van der Pauw method and FTIR,respectively.The XRD results indicate that all the films are amorphous structure.With the increase of sputtering time,resistivity and transmittance decrease simultaneously.However the absorption gets stronger,especially in near-infrared light region.Through Drude model the plasma frequency is calculated and the calculation result is pretty consistent with films deposited at 60 and 90 min.
Indium-tin-oxide (ITO) films with different sputtering time have been prepared by dc magnetron sputtering method on PET substrate at room temperature. The film structure, thickness, electrical and optical properties are investigated by XRD, SEM, van der Pauw method and FTIR, respectively. The XRD results indicate that all the films are amorphous structure. Due to increase of sputtering time, resistivity and density less than .take. calculated and the calculation result is pretty consistent with the films deposited at 60 and 90 min.