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In the present work,the I-V and C-V characteristics at variable temperatures are showed in this paper.An Au/GaN schottky junction was fabricated on the GaN epi-layer before irradiation.The irradiation fluence is 1×109ions.cm-2.The irradiation with high energy 238 U32+(1.22MeV/u)ions was performed in a terminal chamber of the sector-focused cyclotron(SFC)in the National Laboratory of Heavy-ion Accelerators in Lanzhou.The rectification effect are still existed when the fluence reached 1×109ions·cm-2,which the energy deposition density is 2.09eV/nm3.Fig.1shows the G/I-G plot[1]from the I-V charac-
In the present work, the IV and CV characteristics at variable temperatures are showed in this paper. Au Au / GaN schottky junction was fabricated on the GaN epi-layer before irradiation. Irradiation fluence is 1 × 109ions.cm-2.The irradiation with high energy 238 U32 + (1.22 MeV / u) ions was performed in a terminal chamber of the sector-focused cyclotron (SFC) in the National Laboratory of Heavy-ion Accelerators in Lanzhou. The rectification effect is still existed when the fluence reached 1 × 109ions · cm -2, which the energy deposition density is 2.09eV / nm3.Fig.1shows the G / IG plot [1] from the IV charac-