论文部分内容阅读
This paper mainly describes fabrication of two-dimensional GaAs-based photonic crystals with low nanometer scale air-hole arrays using an inductively coupled plasma(ICP) etching system.The sidewall profile and surface characteristics of the photonic crystals are systematically investigated as a function of process parameters including ICP power,RF power and pressure.Various ICP powers have no significant effect on the verticality of air-hole sidewall and surface smoothness.In contrast,RF power and chamber pressure play a remarkable role in improving sidewall verticality and surface characteristics of photonic crystals indicating different etching mechanisms for low nanometer scale photonic crystals.The desired photonic crystals have been achieved with hole diameters as low as 130 nm with smooth and vertical profiles by developing a suitable ICP processes.The influence of the ICP parameters on this device system are analyzed mainly by scanning electron microscopy.This fabrication approach is not limited to GaAs material,and may be efficiently applied to the development of most two-dimensional photonic crystal slabs.
This paper mainly describes fabrication of two-dimensional GaAs-based photonic crystals with low nanometer scale air-hole arrays using an inductively coupled plasma (ICP) etching system. The sidewall profile and surface characteristics of the photonic crystals are systematically investigated as a function of process parameters include ICP power, RF power and pressure. Popular ICP powers have no significant effect on the verticality of air-hole sidewall and surface smoothness. In contrast, RF power and chamber pressure play a remarkable role in improving sidewall verticality and surface characteristics of photonic crystals indicating different etching mechanisms for low nanometer scale photonic crystals have been achieved with hole diameters as low as 130 nm with smooth and vertical profiles by developing a suitable ICP processes. The influence of the ICP parameters on this device system are analyzed mainly by scanning electron microscopy.This fabrication approa ch is not limited to GaAs material, and may be able applied to the development of most two-dimensional photonic crystal slabs.