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本文从位错源开动条件和ν=c_0(τ/τ_0))~m的关系式出发,利用硅单晶中孤立位错运动的实验数据,计算模拟了在恒定应力作用下有源位错群的滑移运动,得出: 1.有源位错群中领先位错的运动速度(v_1)与孤立位错的运动速度(v_(iso))之比约等于1.36,这和实验结果比较接近。2.在有源位错群中,位错的平均速度等于v_(iso)。3.在有源位错群中,位错的平均密度与外加应力成正比,位错源产生位错的速率dN/dt∝τ_α~(m+1)e~(-(Q/kT)
Based on the relationship between the activation condition of dislocation source and ν = c_0 (τ / τ_0)) ~ m, this dissertation uses the experimental data of isolated dislocation motion in silicon single crystal to simulate the active dislocation group under constant stress The results show that: 1. The ratio of the moving velocity of the leading dislocation (v_1) to the velocity of the isolated dislocation (v_ (iso)) in the active dislocation group is about 1.36, which is close to the experimental result . 2. In the active dislocation group, the average velocity of dislocations equals v_ (iso). 3. In the active dislocation group, the average density of dislocations is proportional to the applied stress, and the dislocation rate of dislocation source dN / dtατ_α ~ (m + 1) e ~ (- (Q / kT)