论文部分内容阅读
利用X射线对一种N沟VDMOS在不同的负载功率下进行了辐射试验,采用电流-电压(I-V)测试方法发现这种H2-O2(氢氧合成)氧化栅介质VDMOS样品存在自退火效应时,新增界面陷阱特性与通常的理论不能够很好地一致.根据所测数据,明确提出了有自退火效应样品的新增界面陷阱除了电荷效应外还具有传导电流能力的观点,初步认为该电流是表面费米能级和陷阱能级相互作用导致的产生复合电流,该电流不能简单地从I-V曲线上定量分辨出来.
An X-ray VDMOS was used to test the radiation of VDMOS under different load powers. The current-voltage (IV) test method was used to detect the presence of self-annealing in the VDMOS samples , The newly added interface trap characteristics are not well consistent with the usual theory.According to the measured data, it is clear that the newly added interface traps with self-annealing effect samples have the ability of conducting current in addition to the charge effect, The current is caused by the interaction of the surface Fermi level and the trap level resulting in a composite current that can not be quantitatively resolved from the IV curve.