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为了研究延伸波长In0.8Ga0.2As PIN短波红外探测器的温度响应光电特性,采用闭管扩散的平面型器件工艺,在金属有机化学气相外延(MOCVD)外延生长的NIN型InAs0.6P0.4/In0.8Ga0.2As/InAs0.6P0.4buf./InP材料上制备了正照射延伸波长256×1线列InGaAs红外焦平面探测器,研究了探测器在不同温度下的I-V特性、光谱响应特性和探测率.结果表明,随着温度的降低,在小偏压下,器件的正向暗电流由产生复合电流为主逐渐变为以扩散电流为主.在260~300 K温度范围内,反向电流主要由扩散电流和产生复合电流组成,当温度低于180 K时,器件的反向电流主要为隧穿电流.室温下器件响应截止波长和峰值波长分别为2.57 μm和2.09 μm,峰值探测率为7.25×108cm·Hz1/2/W,峰值响应率为0.95 A/W,量子效率为56.9%.焦平面的峰值探测率在153 K达到峰值,约为1.11×1011cm·Hz1/2/W,响应非均匀性为5.28%.“,”In order to study the temperature-dependent photoelectric characteristics of the extended wavelength In0.8Ga0.2As PIN infrared detectors, based on planer process with sealed-ampoule diffusion method, front-illuminated 256×1 linear planar InGaAs detector arrays were fabricated on NIN-InAs0.6P0.4/In0.8Ga0.2As/ InAs0.6P0.4buf./InP materials by metal organic chemical vapor deposition (MOCVD). And the I-V characteristics, spectral response and detectivity of the detector at different temperatures were analyzed. The results indicate that the forward dark current is dominated by the generation-recombination current and gradually becomes the diffusion current with temperature dropping. Diffusion current and generation-recombination current were the main resource of reverse current of the detector between 260 K and 300 K. The tunneling current predominated at temperature below 180 K. The cutoff wavelength and peak wavelength were 2.57 μm and 2.09 μm at room temperature. The peak detectivity, peak responsivity and quantum efficiency was 7.25×108cm·Hz1/2/W, 0.95 A/W and 56.9% respectively. Furthermore, the average peak detectivity of the detector arrays reached a peak value of 1.11×1011cm· Hz1/2/W and the response nonuniformity was about 5.28% at 153 K.