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采用脉冲激光沉积(PLD)技术在(0006)取向的蓝宝石基片上,通过MgO缓冲层诱导生长了BaFe12O19(BaM)薄膜,研究了沉积温度对BaM薄膜的晶体结构和磁性能的影响规律。X射线衍射(XRD)分析结果表明,在激光脉冲频率6Hz、激光能量180mJ、MgO缓冲层的厚度50nm和沉积温度为750℃的条件下,制得的BaM薄膜c轴取向最好,其(0008)面的ω摇摆曲线半高宽(FWHM)仅为0.289°。扫描电子显微镜(SEM)结果显示此时薄膜的晶粒已有部分呈六角片状。振动样品磁强计(VSM)测试表明,在750℃时沉积的BaM薄膜面外饱和磁化强度为190A/m,剩磁比0.82,薄膜磁性能良好。
BaFe12O19 (BaM) thin films were grown on (0006) oriented sapphire substrate by pulsed laser deposition (PLD) technique. The effects of deposition temperature on the crystal structure and magnetic properties of BaM thin films were studied. X-ray diffraction (XRD) results show that the c-axis orientation of BaM films is the best at a laser pulse frequency of 6 Hz, a laser energy of 180 mJ, a MgO buffer layer thickness of 50 nm and a deposition temperature of 750 ° C. ) FWHM of ω rocking curve is only 0.289 °. Scanning electron microscopy (SEM) results show that the film has been part of the film was hexagonal sheet. Vibrational sample magnetometer (VSM) test showed that the in-plane saturation magnetization of BaM thin film deposited at 750 ℃ was 190 A / m, remanence ratio was 0.82, and the magnetic properties of the films were good.