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采用能量为1 Me V的电子对几种不同结构的Al Ga N/Ga N HEMT器件进行了最高注量为8.575×1014cm-2的辐照。实验发现:电子辐照后,最高注量下器件欧姆接触性能也几乎没有退化。辐照后未钝化器件的正反向栅电流有所增加,而且肖特基势垒高度随着辐照注量的增加而降低。几种结构HEMT器件的辐照结果表明,电子辐照后只有未钝化器件的特性有所退化,随着辐照注量增加,器件漏电流和跨导下降越明显,而且线性区退化大于饱和区,而阈值电压变化很小。分析表明,HEMT器件参数性能退化的主要原因是栅源和栅漏间隔区辐照感生表面态负电荷的产生。此外实验结果也说明Si N钝化、MOS结构和场板结构都是很好的抗辐照加固的手段。
Several kinds of Al Ga N / Ga N HEMT devices with different structures were irradiated with a maximum fluence of 8.575 × 1014cm-2 with 1 MeV electrons. The experimental results show that after the electron irradiation, the ohmic contact performance of the device under the maximum fluence is almost no degradation. The positive and negative gate currents of unpassivated devices increased after irradiation, and the Schottky barrier height decreased with the increase of irradiation dose. The results of the irradiation of several structures HEMT devices show that only the characteristics of unpassivated devices after electron irradiation have been degraded. With the increase of irradiation fluence, the leakage current and transconductance drop of the device are more obvious, and the degradation of the linear region is greater than the saturation Area, and the threshold voltage changes very little. The analysis shows that the main reason for the degradation of the HEMT device performance is the generation of negative charges on the surface of the gate-drain spacer exposed by irradiation. In addition, the experimental results also show that Si N passivation, MOS structure and field plate structure are very good means of anti-radiation reinforcement.