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对p型掺杂1.3μm InAs/GaAs量子点激光器的最大模式增益进行了实验和理论分析.实验上,测量了不同腔长激光器阈值电流密度与总损耗的对应关系,拟合出的最大模式增益为17.5cm-1,与相同结构非掺杂量子点激光器的最大模式增益一致.同时理论分析表明,p型掺杂对InAs/GaAs量子点激光器的最大模式增益并无影响,并且最大模式增益的计算结果与实验值相符.具有较小高度或高宽比的量子点能达到更高的最大模式增益,而较高的最大模式增益对p型掺杂1.3μm InAs/GaAs自组织量子点激光器在光通信系统中的应用具有重要意义.
The maximum mode gain of the p-type doped 1.3μm InAs / GaAs QDD laser was experimentally and theoretically analyzed. The corresponding relationship between the threshold current density and the total loss of different cavity length lasers was measured experimentally, and the maximum mode gain Is 17.5cm-1, which is consistent with the maximum mode gain of the same structure undoped QD laser.At the same time theoretical analysis shows that p-type doping has no effect on the maximum mode gain of InAs / GaAs QDs, and the maximum mode gain The calculated results are in good agreement with the experimental data. Quantum dots with smaller height or aspect ratio can achieve higher maximum mode gain, while higher maximum mode gain is more effective for p-type doped 1.3μm InAs / GaAs QDs The application of optical communication system is of great significance.