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首先研究了氩退火对大直径直拉Si单晶表面的空洞型微缺陷的影响。样品在1 200℃下进行退火,退火前后样品上的晶体原生粒子缺陷(COP)利用激光计数器SP1来观察。试验表明Si片经过1 h退火后,表面的COP全部被消除;另外,对样品退火前后的几何参数和金属含量也做了测试,发现样品的几何参数和金属含量都没有明显的变化;最后研究了高温退火对MOS电容栅氧化层性能的影响,结果表明退火前后的样品分别制备为MOS电容,利用斜坡电压法来测试其击穿电压。实验发现,Si片经过1 200℃热处理后,MOS电容的击穿电压有了明显的提高,这表明高温退火工艺能够有效提高栅氧化层的性能。
Firstly, the effect of argon annealing on the cavity microdefects on the surface of large-diameter Czochralski Si single crystal has been studied. The samples were annealed at 1 200 ° C and the crystal primary particle defects (COPs) on the samples before and after annealing were observed using a laser counter SP1. Experiments show that the Si sheet after 1 h annealing, the surface of the COP are all eliminated; In addition, the sample annealing before and after the geometric parameters and metal content have also been tested and found no significant changes in the sample geometry and metal content; the final study The effect of high temperature annealing on the performance of MOS capacitor gate oxide was investigated. The results showed that the samples before and after annealing were respectively prepared as MOS capacitors, and the breakdown voltage was tested by the ramp voltage method. It is found that the breakdown voltage of MOS capacitor has been significantly improved after Si wafer heat treatment at 1 200 ℃, which shows that the high temperature annealing process can effectively improve the gate oxide performance.