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随着超LSI的集成度不断提高,最近亚微米加工技术正在引起人们的注意。普通光刻使用3500—4500(?)波长的紫外光,但对1μm以下的图形由于光干涉等原因是无法制作的,于是。扫描型电子束曝光,X线曝光方式的研究工作得到了迅速的发展。虽然一般光学系统也可使用更短波长的光,也可能制作出线宽1μm以下的图形,但是,光致抗蚀剂不适用3000(?)以下波长的光,也没有合适的曝光光源,1974年Stanford大学的G.C比的克隆用波长2000(?)以下的紫外光对
With the increasing integration of ultra-LSI, submicron processing technology is attracting attention recently. Ordinary lithography uses 3500-4500 (?) Wavelength ultraviolet light, but the following 1μm graphics due to light interference and other reasons can not be made, so. Scanning electron beam exposure, X-ray exposure of the research work has been rapid development. Although general optical systems may use shorter wavelength light, it is also possible to fabricate patterns with a line width of 1 μm or less. However, the photoresist is not suitable for light of a wavelength of 3000 (?) Or less, nor is a suitable exposure light source. The GC clones at Stanford University are paired with ultraviolet light at wavelengths below 2000 (?)