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采用S iH4-C3H8-H2气体反应体系在S iO2/S i复合衬底上进行了S iC薄膜的APCVD生长。实验结果表明,H2表面预处理温度过高或时间过长会导致衬底表面S iO2层熔化再结晶或被腐蚀掉。通过“先硅化再碳化”的工艺方法可以较好地解决S iO2/S i复合衬底上S iC成核困难以及粘附性差的问题,同时还可以有效抑制S iO2中的O原子向S iC生长膜扩散。选择预处理温度和薄膜生长温度为1180℃、H2预处理、S iH4硅化和C3H8碳化时间均为30 s的最佳生长条件时,可以得到<111>晶向择优生长的多晶3C-S iC外延薄膜,薄膜生长速率约为2.0~2.5nm/m in.
APCVD growth of S iC thin films was carried out on Si i O 2 / S i composite substrates by using S iH 4 -H 3 H 8 -H 2 gas reaction system. The experimental results show that the pretreatment of H2 surface temperature is too high or too long will cause the substrate surface Si02 layer melting recrystallization or corrosion. Through the “first siliconization re-carbonization” process method can be better to solve S iO2 / S i composite substrate S iC nucleation difficulties and poor adhesion problems, but also can effectively inhibit the S iO2 O atoms to S iC Growth membrane proliferation. The optimal growth conditions for the <111> growth toward polycrystalline 3C-S iC with selective pretreatment and film growth temperatures of 1180 ℃, H2 pretreatment, SiH4 silicification and C3H8 carbonization time of 30 s were obtained. Epitaxial thin film, the film growth rate of about 2.0 ~ 2.5nm / m in.