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在温度4.2～77K、磁场强度0～5T、不同电场强度条件下,对不同参数材料的样品进行了物理测试。在低温、弱电场下即欧姆电场区,以横向磁场和温度作为可变外界条件,采用平衡法,测得N型InSb样品在“磁冻出”状态下霍尔电压和电阻电压随温度的变化,利用“磁冻出”区的磁阻和霍尔效应求得导带电子浓度随温度的变化。且利用Putley的导带电子浓度与温度、磁场强度和材料掺杂量的关系式,求得N型InSb材料的补偿度。
Under the conditions of temperature of 4.2 ~ 77K, magnetic field strength of 0 ~ 5T, different electric field strength, the samples of different parameters were tested physically. In the low temperature and weak electric field, that is, the ohmic electric field, the horizontal magnetic field and temperature are used as the variable external conditions, and the balance method is used to measure the change of the Hall voltage and the resistance voltage with the temperature in the “magnetically frozen” state of the N-type InSb sample , The magnetoresistance and Hall effect of “magnetically frozen out” zone are used to obtain the change of the conduction band electron concentration with temperature. The compensation degree of N-type InSb material is obtained by using Putley’s relationship between conduction band electron concentration and temperature, magnetic field strength and material doping amount.