尽管人们对InSb已进行了大量的研究,但至今仍有一些问题尚未解决,两个对载流子寿命可能有显著影响的复合中心问题就是其中之一.Laff和范绪筠通过对InSb载流子寿命测试数据的处理,提出了禁带内存在二个施主复合中心的看法.根据电子轰击使这两个复合中心的密度增大的现象,不少作者曾指出该两个复合中心系结构缺陷所造成,但他们都未进行对它们的本性加以推测的尝试. Although a great deal of research on InSb has been carried out, there are still some problems to be solved so far. Two of the complex center problems that may have a significant influence on the carrier lifetime are one of them.Laff and Fan Xujun have studied the InSb carrier lifetime Test data processing, put forward the idea of ​​two donor compound centers in the forbidden band.According to the phenomenon that the electron bombardment increases the density of the two composite centers, many authors have pointed out the structural defects caused by the two composite centers , None of them have attempted to speculate on their nature.