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通过原子层沉积法制作底栅型ZnO-TFT,并从衬底温度,氧化锌层厚度以及退火温度几个方面,分析对器件输出特性,转移特性和开关比的影响。
The bottom-gate ZnO-TFT was fabricated by atomic layer deposition. The influences of substrate temperature, zinc oxide layer thickness and annealing temperature on the output characteristics, transfer characteristics and switching ratio were analyzed.