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引言 功率晶体管烧毁的主要原因是二次击穿。目前对二次击穿现象的研究主要有两方面的理论:一个是热不稳定理论,认为晶体局部发生热点产生热崩,进入二次击穿。这一理论解释正偏二次击穿与观察到的现象十分类似。但不能说明零偏和反偏二次击穿现象。另一个是电效应引起的二次击穿理论,认为当流过势垒区的载流子密度大于势垒区固定空间电荷密度时,结电场受到严重干扰,使器件进入负阻状态,而发生电流型二次击穿。两种理论都不能
Introduction Power transistor burned the main reason is the second breakdown. At present, there are mainly two theories about the phenomenon of secondary breakdown. One is the theory of thermal instability, which considers that hot spots occur locally in the crystal and enter secondary breakdown. This theory explains the positive partial secondary breakdown is very similar to the observed phenomenon. But can not explain the partial bias and reverse bias secondary breakdown phenomenon. The other is the secondary breakdown theory caused by the electrical effect. It is considered that when the carrier density flowing through the barrier region is greater than the fixed space charge density in the barrier region, the junction field is severely disturbed, causing the device to enter the negative resistance state, which occurs Current-type secondary breakdown. Neither theory can