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对同步辐射X射线光刻及在GaAsPHEMT器件制作中的应用进行了研究,并制作出栅长0.15μm的AlGaAs/InGaAs/GaAsPHEMT晶体管。研究结果表明,X射线光刻在剥离图形及T型栅结构制作工艺中具有极好的光刻图形质量，在混合光刻工艺中，抑止GaAs合金点的形成是取得良好对准标记的关键。
The research of synchrotron radiation X-ray lithography and its application in the fabrication of GaAsPHEMT devices were studied, and AlGaAs / InGaAs / GaAsPHEMT transistors with 0.15μm gate length were fabricated. The results show that X-ray lithography has excellent lithographic pattern quality in the stripping pattern and T-gate structure fabrication process. Suppression of GaAs alloy dots in hybrid lithography is the key to obtain good alignment marks.