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使用计算机辅助设计方法,开发了一种小尺寸的硅集成压阻式压力敏感元件。组成惠斯登电桥的四个应变电阻被放置在方膜片的边缘。为了得到最大的灵敏度,这些电阻的位置和尺寸通过使用“敏感元件模拟程序”(SENSIM)被最优化了。借助于SUPREM 确定了敏感元件的构成参数。为了形成浅的电阻结构,使用较低的能量把硼注入到n 型硅膜片中。使用氢氧化钾(KOH)各向异性刻蚀液,刻蚀出了10μm 厚的膜片。为了获得精确的厚度控制,使用了一种新的电化学刻蚀停止技术。
Using a computer-aided design approach, a small-size silicon integrated piezoresistive pressure-sensitive element was developed. The four strain resistors that make up the Wheatstone bridge are placed on the edge of the square diaphragm. For maximum sensitivity, the location and size of these resistors is optimized using SENSIM. With the help of SUPREM, the composition parameters of the sensor were determined. In order to form a shallow resistive structure, boron is implanted into the n-type silicon diaphragm using lower energy. Using a potassium hydroxide (KOH) anisotropic etching solution, a 10 μm thick film was etched. In order to obtain accurate thickness control, a new electrochemical etch stop technique was used.