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基于原子力显微镜(AFM)在硅(Si)表面进行局域阳极氧化的技术,以其成本低、易加工等优势被广泛应用于各种纳米元器件的制造.本文基于AFM在Si表面进行局域阳极氧化来制作纳米计量标准样板,首先分别在接触模式和轻敲模式下进行实验,定量分析了偏置电压、移动速率和刻蚀方向等主要参数对所得纳米线尺寸的影响,从而得到标准样板制作的最佳加工参数:在探针针尖电压为-7 V、移动速率为0.3μm/s、Z Distance值为-45 nm时,可以产生稳定的标准样板结构;同时两种模式下对纳米氧化线的影响趋势相同.最后在此最佳参数下,利用AFM在Si表面进行局域阳极氧化,加工得到了一维线光栅、二维光栅和圆形光栅结构.
Based on atomic force microscopy (AFM) on the silicon (Si) surface of the local anodic oxidation technology, its low cost, easy processing and other advantages are widely used in the manufacture of a variety of nano-devices based on AFM in the Si surface area Anode oxidation to produce nano-meter standard model, first of all, respectively, in contact mode and tapping mode experiments, quantitative analysis of the bias voltage, the rate of movement and etching direction and other major parameters of the resulting nanowire size, resulting in a standard template The best processing parameters of the fabrication are as follows: a stable standard sample structure can be produced when the probe tip voltage is -7 V, the moving speed is 0.3 μm / s and the Z-distance value is -45 nm; at the same time, the nano-scale oxidation The trend of the line is the same.Finally, under the optimal parameters, local anodic oxidation on the Si surface by AFM was used to fabricate one-dimensional line grating, two-dimensional grating and circular grating structure.