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根据MBE实际生长条件，采用在应变Si1-xGex／SiMQW结构中同应变相关的Ge的扩散系数，用生长过程的移动边界条件，求解了Ge在Si1-xGex／SiMQW中的扩散方程，模拟出了MQW的畸变，指出了这种畸变具有固定的不对称性，并分析了不同生长温度、应变及阱宽情况下MQW的畸变．
According to the actual growth conditions of MBE, using the diffusion coefficient of Ge associated with strain in the strained Si1-xGex / SiMQW structure, the diffusion equation of Ge in Si1-xGex / SiMQW is solved by using the moving boundary conditions of the growth process. The distortion of MQW is pointed out. This distortion has a fixed asymmetry, and the distortion of MQW under different growth temperature, strain and well width is analyzed.