论文部分内容阅读
首先对光刻过程和RtR(Run-to-Run)控制技术的产生背景进行了介绍,对统计过程控制的不足进行了分析并给出了RtR控制器的一般结构。然后从过程建模和控制算法两个角度对三种主要的光刻过程RtR控制器EWMA,MPC和ANN进行了综述和评价,对这三种控制器在非线性控制、单变量控制、多变量控制的适用性和优化控制效果进行了比较分析。最后指出基于MPC的非线性多变量控制器将成为光刻过程RtR控制器的主要研究方向。
Firstly, the background of lithography process and RtR (Run-to-Run) control technology are introduced. The deficiencies of statistical process control are analyzed and the general structure of RtR controller is given. Then, three main RtR controllers EWMA, MPC and ANN are reviewed and evaluated from the perspectives of process modeling and control algorithms. The three controllers are used in nonlinear control, univariate control, multivariable The applicability of control and the effect of optimal control are compared and analyzed. Finally, it is pointed out that MPC-based nonlinear multivariable controller will become the main research direction of RtR controller in lithography process.