,Theoretical Prediction of Asymmetrical Jet Formation in Two-Metallic-Flow Collision

来源 :中国物理快报(英文版) | 被引量 : 0次 | 上传用户:login_action
下载到本地 , 更方便阅读
声明 : 本文档内容版权归属内容提供方 , 如果您对本文有版权争议 , 可与客服联系进行内容授权或下架
论文部分内容阅读
We develop a basic problem in ballistics and impact engineering, conceing the collision of two fluid streams with different widths. The geometrical theory of plane asymmetrical jet formation is presented and a closed form solution is given. The width and flow direction of the outgoing flows are predicted both analytically and numerically as a function of initial configuration of the incoming flows. The predictions are more accurate than the results of other analytic models and in agreement with the experimental data and numerical results over a wide range of flow widths ratio variation.
其他文献
Considering the special carriers in organic semiconductors, the spin polarized current under electric field in a ferromagnetic/organic semiconductor system is t
期刊
鸡西矿业集团公司张辰煤矿西三采区3
We report a new diamond synthesis process in which cubic boron nitride single crystals are used as seeds, Fe80Ni20 alloy powder is used as catalyst/solvent and
期刊
The electronic band structures of wurtzite GaN with Ga and N vacancy defects are investigated by means of the first-principles total energy calculations in the
期刊
The lowest energy structures of (SiO2)nO2 cluster skeletons with size from n = 2 to 12 is investigated theoretically by genetic algorithm.
期刊
We study the complete synchronization between different systems. Based on our new idea about structure adaptation, a new synchronized method, i.e. the structure
期刊
在美国威斯康辛大学生命科学院的一间实验室里,一项前所未有的人体实验正在进行。科研人员试图通过实验证明,人类感知外界信息的途径可能不止视觉一种。  受试者是该学院三年级学生威廉·莫勒尔。实验主导者则是世界著名脑神经学专家保罗·齐达耶。他一直从事大脑神经纵深领域的研究,齐达耶坚信,人类的大脑运作机制可能不像人们已知的那样简单。  神奇的实验  密闭的实验室内拉着窗帘,桌上铺着厚厚的台布。威廉·莫勒尔面
Hypeuclear magnetic moment and ∧-N interaction in 17∧O has been studied within relativistic mean field theory.Without core polarization, the relativistic resu
期刊
对外观相似的两种蓝白色宝石材料针钠钙石和玻璃进行了各项测试和对比研究,得出针钠钙石位于1060cm-1附近的红外光谱吸收高峰、化学成分中Al、Zn元素的缺失和Mn元素的存在是
A new AlGaN/AlN/GaN high electron mobility transistor (HEMT) structure using a Compositionally step-graded AlGaN barrier layer is grown on sapphire by metalorga
期刊