论文部分内容阅读
本文通过简要分析,阐明内匹配方法是GaAs微波功率场效应晶体管实现大功率的必由途径。介绍了内匹配网络的特点和要求。详细叙述了DX581型微波功率场效应晶体管内匹配网络的设计。其输入端采用Wilkinson功分器和一节T型网络,输出端采用半分布参数的一节切比雪夫低通网络。设计过程分两部分,首先是用模拟阻抗区进行手算,然后通过HP84网络分析仪测得的小信号S参数和(NLCAD)程序拟合出管芯的大信号模型和计算出大信号动态阻抗进行机助设计。本设计成功地用于DX581型器件的设计定型并实现5.9～6.4GHz下输出功率≥3W、功率增益5dB,输入和输出端均匹配到50Ω。
This article through a brief analysis to clarify the internal matching method is the GaAs microwave power field-effect transistor must be the only way to achieve high power. Introduced the characteristics and requirements of the internal matching network. Described in detail DX581 microwave power field effect transistor matching network design. The input uses a Wilkinson power splitter and a T-network, and the output uses a Chebyshev low-pass network with a semi-distributed parameter. The design process is divided into two parts, the first is to use analog impedance area for hand calculations, and then through the HP84 network analyzer measured small signal S parameters and (NLCAD) program to fit the large signal model of the die and calculate the large signal dynamic impedance Machine-assisted design. The design was successfully used to design DX581 device design and achieve 5.9 ~ 6.4GHz output power ≥ 3W, power gain 5dB, the input and output are matched to 50Ω.