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Bismuth silicon oxide(Bi_(12)SiO_(20))crystals were grown by the typical Kyro-poulos technique in〔001〕and〔111〕crystallographic orientations.The diffe-rence of axial temperature gradient nearby the liquip-solid interface werecontrolled so that to change the crystal habits.
Bismuth silicon oxide (Bi 12 SiO 20) crystals were grown by the typical Kyro-poulos technique in [001] and [111] crystallographic orientations. The diffe-rence of axial temperature gradient nearby the liquip-solid interface werecontrolled so that to change the crystal habits.