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中国兵器工业总公司于1992年1月8～12日在成都主持了对西南技术物理研究所SPD-032硅雪崩光电二极管及SPD-052雪崩光电二极管前放组件(λ=400～1100nm)产品的生产鉴定会。有关专家及部分使用厂家代表参加了生产鉴定会。与会代表对该产品的工艺及技术资料、产品性能,对生产线的生产、检测设备,对质量保证体系等进行了全面认真的审查。全体代表一致认为,1985年曾获国家技术进步一等奖的该项成果,近几年经过多次工艺改进,
China Ordnance Industry Corporation presided over the research and development of SPD-032 silicon avalanche photodiode and SPD-052 avalanche photodiode preamplifier (λ = 400 ~ 1100nm) products of Southwest Institute of Technical Physics in Chengdu from January 8 to January 12, 1992 Production appraisal society. The experts and some of the manufacturers representatives to participate in the production appraisal. Participants on the product of technology and technical information, product performance, the production line, testing equipment, quality assurance system conducted a comprehensive and serious review. All delegates agreed that this achievement, which won the first prize of national technological progress in 1985, has been improved several times in recent years,