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采用改进垂直布里奇曼法生长出的磷锗锌(ZnGeP2,ZGP)晶体中存在各种缺陷,导致其红外透过率较低,刚生长的晶体不能直接用于制备红外非线性光学器件。分别采用真空、同成分粉末包裹和真空-同成分粉末包裹的复合退火工艺对生长的ZGP晶体进行了退火热处理研究。应用傅立叶红外光谱仪(FTIR)、高阻仪(HRM)、X射线能谱仪(EDS)等对退火前后的晶体性能和成分进行了测试分析。结果表明,三种方法退火后晶体的红外透过率和电阻率都得到改善,其中复合退火工艺的改善效果最为显著,晶体红外透过率由41%提高到60%,电阻率由2.5×108Ω.cm提高到7.2×108Ω.cm,晶体成分接近ZGP理想化学配比,退火后晶体的光学和电学性能得到显著改善,可用于ZGP-OPO器件制作。
Various defects exist in the crystals of ZnGeP2 and ZGP grown by modified vertical Bridgman method, resulting in low infrared transmittance. The newly grown crystals can not be directly used to prepare infrared nonlinear optics. The grown ZGP crystals were annealed and annealed by using vacuum, same component powder coating and vacuum-same component powder composite annealing process respectively. The properties and compositions of the samples before and after annealing were analyzed by FTIR, HRM and EDS. The results show that the infrared transmittance and the resistivity of the three kinds of annealed alloys are all improved. The improvement effect of the composite annealing process is the most significant. The infrared transmittance of the crystal increases from 41% to 60%, and the resistivity is from 2.5 × 108Ω .cm to 7.2 × 108Ω.cm, the crystal composition close to the ZGP ideal chemical ratio, the optical and electrical properties of the annealed crystal can be significantly improved, which can be used for ZGP-OPO device fabrication.