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采用等离子增强化学气相法 (PECVD)在碲镉汞 (MCT)衬底上沉积出纳米团聚的类金刚石薄膜 (DLC)。用原子力显微镜 (AFM )和侧向力显微镜 (LFM)对DLC和MCT表面形貌进行表征 ;用俄歇电子能谱 (AES)对DLC/MCT界面附近各元素含量的分布进行分析研究。结果表明 :当膜厚达到2 5nm以上 ,这种DLC膜就能够有效地抑制MCT中HgTe的分解和Hg与Te的外扩散。AFM和LFM的观察结果表明 ,原始MCT晶片经 10 0℃在氮气气氛中退火 30min ,表面区域出现了不同与MCT的微米量级的新相 ,而由DLC膜保护的MCT晶片表面就没有观察到这种由分解反应引起的相变。
DLC films were deposited on HgCdTe substrates by plasma-enhanced chemical vapor deposition (PECVD). The morphologies of DLC and MCT were characterized by atomic force microscopy (AFM) and lateral force microscopy (LFM). The distribution of each element in DLC / MCT interface was analyzed by Auger electron spectroscopy (AES). The results show that when the film thickness reaches more than 25nm, the DLC film can effectively suppress the decomposition of HgTe and the diffusion of Hg and Te in MCT. The results of AFM and LFM showed that the original MCT wafers were annealed in nitrogen atmosphere at 100 ℃ for 30min, new phases on the order of microns different from MCT appeared in the surface region, whereas the surface of MCT wafers protected by DLC film was not observed This phase transition caused by the decomposition reaction.