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本文对非欧姆氧化锌(ZnO)陶瓷的界面态进行了探讨,提出了控制非线性电导特性的界面态是由于晶界的深能级电子陷阱,且深能级电子陷阱的形成是由于存在氧缺位缺陷和金属离子正电中心的观点.本文在实验分析的基础上提出了一种新的晶界势垒模型,认为晶界势垒分为主晶界势垒和次晶界势垒,两种势垒的物理性质相同,但形成和蜕变的温度不同。
In this paper, the interfacial states of non-ohmic zinc oxide (ZnO) ceramics are discussed. It is proposed that the interfacial states that control the nonlinear conductance properties are due to the deep level electron traps in the grain boundaries and the formation of deep level electron traps due to the presence of oxygen Lack of defects and positive ions center of the metal point of view.In this paper, based on the experimental analysis proposed a new model of the grain boundary barrier, that the grain boundary barrier is divided into the main and secondary grain boundary barrier, The physical properties of the two barriers the same, but the formation and transformation of different temperatures.