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氮化硅薄膜作为传统的晶体硅太阳电池钝化减反膜,其性能的变化直接影响电池的转化效率。通过改变管式PECVD的射频功率,制备了不同膜厚和折射率的氮化硅薄膜,并分别进行了薄膜致密性以及硅片镀膜后少子寿命的测试。实验及测试结果表明,改变PECVD的射频功率对氮化硅薄膜的沉积速率及其薄膜的性能有重要影响。
As a traditional passivation anti-reflection film of crystalline silicon solar cells, the change of the performance of the silicon nitride film directly affects the conversion efficiency of the battery. By changing the RF power of the tube PECVD, different thickness and refractive index of the silicon nitride film were prepared, and the thin film densification and the test of the minority carrier lifetime after the silicon coating were respectively carried out. The experiment and test results show that changing the RF power of PECVD has an important influence on the deposition rate of silicon nitride film and the performance of the film.