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用气固相反应原理分析了单晶硅热氧化机理。在氧化中期,考虑到热应力对扩散系数的影响,从而得出了硅氧化的一个新模型,即化学反应控速——四次方混合控速——扩散控速模型。用该模型处理了文献[4]中的数据与本实验结果均得到满意的相关系数。另外,用扫描电镜和透射电镜对氧化膜进行了观察,分析了单晶硅的氧化膜生长机理。
The mechanism of thermal oxidation of monocrystalline silicon was analyzed by gas-solid reaction principle. In the mid-oxidation period, taking into account the influence of thermal stress on the diffusion coefficient, a new model for the oxidation of silicon was obtained, namely the chemical reaction rate control-quadratic mixing control-diffusion control model. With this model, the data in [4] and the experimental results are satisfied with the correlation coefficient. In addition, the oxide film was observed by scanning electron microscopy and transmission electron microscopy, and the growth mechanism of oxide film of single crystal silicon was analyzed.