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利用分子束外延生长装置生长出了ＧａＡｌＡｓ／ＧａＡｓ梯度折射率分别限制（ＧＲＩＮ－ＳＣＨ）单量子阱结构材料。样品的测量结果表明，样品质量达到了设计要求。利用该材料制作的激光二极管，室温连续工作，功率为１ Ｗ，斜率效率达到１．０４ Ｗ／Ａ。
GaAlAs / GaAs graded-index-limited (GRIN-SCH) single quantum well structure material was grown by molecular beam epitaxy. The measurement results show that the sample quality meets the design requirements. The laser diodes made from this material work continuously at room temperature with a power of 1 W and a slope efficiency of 1.04 W / A.