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为了提高永磁薄膜阵列的剩磁和最大磁能积 ,在电镀制备CoNiMnP永磁薄膜阵列过程中引入少量稀土Nd原子替代部分Ni原子 ,采用光刻和电镀技术在 5mm× 5mm× 0 .2mm的硅片上设计并制备了 2 0 0 0个大小为 5 0 μm× 5 0 μm的CoNi1 -xNdxMnP垂直各向异性永磁薄膜阵列 ,并对该薄膜陈列的组成、磁性能等进行了分析与测试。结果表明 :薄膜阵列的组成为 (质量分数 ) :Nd 1.90 % ,Co 86.62 % ,Ni 5 .68% ,Mn2 .0 6% ,P 3 .74% ;阵列垂直方向磁性能为 :Hc=5 9.7kA·m- 1 ,Br=0 .5 3T ,(BH) max=11.3kJ·m- 3;阵列水平方向磁性能为 :Hc=2 7.8kA·m- 1 ,Br=0 .42T ,(BH) max=3 .2kJ·m- 3。
In order to improve the remanence and the maximum magnetic energy product of the permanent magnet film array, a small amount of rare earth Nd atoms are introduced into the CoNiMnP permanent magnet film array to replace part of the Ni atoms during electroplating. Lithography and electroplating techniques are used to fabricate a 5 mm × 5 mm × 0.2 mm silicon On the chip, 200 CoNi1-xNdxMnP vertical anisotropic permanent magnetic film arrays with a size of 50 μm × 500 μm were designed and fabricated. The composition, magnetic properties, etc. of the films were analyzed and tested. The results show that the composition of the film array is (mass fraction) Nd 1.90%, Co 86.62%, Ni 5 .68%, Mn 2 .0 6%, P 3 .74%. The perpendicular magnetic properties of the array are Hc = 5 9.7 (BH) max = 11.3kJ · m-3; the horizontal magnetic properties of the array are: Hc = 2 7.8kA · m-1, Br = 0.42T, (BH ) max = 3 .2 kJ · m -3.