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High efficiency,stable organic light-emitting diodes(OLEDs)based on 2-pheyl-4’-carbazole-9-H-Thioxanthen-9-one-10,10-dioxide(TXO-PhCz)with different doping concentration are constructed.The stability of the encapsulated devices are investigated in detail.The devices with the 10wt% doped TXO-PhCz emitter layer(EML)show the best performance with a current efficiency of 52.1 cd/A,a power efficiency of 32.7lm/W,and an external quantum efficiency(EQE)of 17.7%.The devices based on the 10wt%-doped TXO-PhCz EML show the best operational stability with a half-life time(LT50)of 80 h,which is 8h longer than that of the reference devices based on fac-tris(2-phenylpyridinato)iridium(Ⅲ)(fr(ppy)_3).These indicate excellent stability of TXO-PhCz for redox and oxidation processes under electrical excitation and TXO-PhCz can be potentially used as the emitters for OLEDs with high efficiency and excellent stability.The high-performance device based on TXO-PhCz with high stability can be further improved by the optimization of the encapsulation technology and the development of a new host for TXO-PhCz.
High efficiency, stable organic light-emitting diodes (OLEDs) based on 2-pheyl-4’-carbazole- 9-H-Thioxanthen-9- one 10,10-dioxide (TXO-PhCz) with different doping concentration constructed. The stability of the encapsulated devices are investigated in detail. The devices with the 10 wt% doped TXO-PhCz emitter layer (EML) show the best performance with a current efficiency of 52.1 cd / A, a power efficiency of 32.7 lm / W, and an external quantum efficiency (EQE) of 17.7%. The devices based on the 10 wt% -doped TXO-PhCz EML show the best operational stability with a half-life time (LT50) of 80 h, which is 8h longer than that of the Reference devices based on fac-tris (2-phenylpyridinato) iridium (III) (fr (ppy) _3) .These excellent stability of TXO-PhCz for redox and oxidation processes under electrical excitation and TXO-PhCz can be potentially used as the emitters for OLEDs with high efficiency and excellent stability. the high-performance device based on TXO-PhCz with high stability can be further improve d by the optimization of the encapsulation technology and the development of a new host for TXO-PhCz.