论文部分内容阅读
一、引言自从一九六二年应用射频溅射技术成功地溅射了石英、蓝宝石和金刚石以来,今天它已经广泛地用来溅射金属(如钛、金等),半导体(如硅、砷化镓等),绝缘体(如二氧化硅、三氧化二铝和氮化硅等)。由于射频溅射具有如下优点:(一)它具有多面性,任何材料(导电的或非导电的)都可以朋作靶子;(二)容易精确控制淀积速率和薄膜厚度;(三)在大片面积上薄膜厚度均匀性和化学计量比都是优良的;(四)淀积薄膜一般具有优良的机械性能(如粘附性强等)。
I. INTRODUCTION Since the successful sputtering of quartz, sapphire and diamond by RF sputtering in 1962, it has been widely used to sputter metals (such as titanium, gold, etc.), semiconductors (such as silicon, arsenic Gallium, etc.), insulators (such as silicon dioxide, aluminum oxide and silicon nitride, etc.). Because RF sputtering has the following advantages: (a) it has a multi-faceted nature, any material (conductive or non-conductive) can be used as a target; (b) easy and precise control of the deposition rate and film thickness; Area film thickness uniformity and stoichiometry are excellent; (d) deposited films generally have excellent mechanical properties (such as adhesion, etc.).