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HfO_2是一种很有应用前景的高k栅介质材料,稀土元素掺杂可以有效改进HfO_2的性能。采用磁控溅射方法制备了Ge基HfGdO薄膜,即HfGdO/Ge异质结。X射线衍射结果显示这种方法制备的薄膜是非晶结构,利用原子力显微镜对退火前后薄膜的表面形貌进行了观察,俄歇电子能谱结果发现制备的薄膜是符合化学计量比的。通过X射线光电子能谱(XPS)对薄膜的禁带宽度和它相对于Ge衬底的导带、价带偏移进行了研究,结果显示其禁带宽度为(5.86±0.2)eV,HfGdO/Ge结构的价带偏移和导带偏移分别是(3.6±0.2)eV和(1.6±0.3)eV。这些数据将为HfGdO薄膜在栅介质上的应用提供理论依据。
HfO_2 is a promising high-k gate dielectric material. The doping of rare earth elements can effectively improve the performance of HfO_2. Ge-based HfGdO films were prepared by magnetron sputtering, namely HfGdO / Ge heterojunction. X-ray diffraction results show that the film prepared by this method has an amorphous structure. The surface morphology of the film before and after annealing is observed by using an atomic force microscope. The Auger electron spectroscopy results show that the prepared film is in a stoichiometric ratio. The forbidden band width of the film and its conduction band and valence band offset with respect to the Ge substrate were studied by X-ray photoelectron spectroscopy (XPS). The results showed that the forbidden band width was (5.86 ± 0.2) eV, HfGdO / The valance band offset and conduction band offset of the Ge structure are (3.6 ± 0.2) eV and (1.6 ± 0.3) eV, respectively. These data will provide a theoretical basis for the application of HfGdO film on the gate dielectric.