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化学机械抛光后,Si片表面残留有机物会影响清洗的综合效果,并会造成器件失效。针对上述问题提出了一种新的清洗方案,用金刚石膜电化学法制备氧化性强的过氧焦磷酸盐溶液,可有效氧化分解表面有机沾污,配合FA/O I型活性剂溶液进行预清洗,去除表面颗粒的同时降低了表面粗糙度。此外,过氧焦磷酸盐被还原成的焦磷酸盐具有很强的络合力,它能与Cu等金属离子络合,达到同时去除金属杂质的目的。研究了氧化液的体积分数对有机物清洗效果的影响,发现氧化液的体积分数为60%～100%时残留有机物去除效果最佳。作为一种新型的清洗方法,清洗效率高且成本低,操作简单可控且环保,符合新时期半导体清洗工艺的要求。
Chemical mechanical polishing, Si chip surface residual organic matter will affect the overall cleaning effect, and will cause device failure. Aiming at the above problems, a new cleaning scheme is proposed. The preparation of a highly oxidizing peroxydisulfate solution by diamond film electrochemistry can effectively oxidize and decompose the surface organic contaminants, and pre-clean with FA / OI active solution , Remove the surface of the particles while reducing the surface roughness. In addition, pyrophosphate is reduced to pyrophosphate has a strong complexing force, it can Cu and other metal ions complex, to achieve the purpose of removing metal impurities at the same time. The effect of the volume fraction of the oxidant on the cleaning effect of organic compounds was studied. It was found that the residual organic matter removal efficiency was best when the volume fraction of oxidant was 60% ~ 100%. As a new type of cleaning method, the cleaning efficiency is high and the cost is low. The operation is simple and controllable and environment-friendly, and meets the requirements of the semiconductor cleaning process in the new period.