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用生长液滴法研究了二－（２－乙基己基）磷酸（ＨＤＥＨＰ，ＨＡ）在盐酸介质中萃取Ｇａ（Ⅲ）的动力学。结果表明，发生在界面区域内的两步连续反应：Ｇａ３＋＋Ａｉ－＝ＧａＡｉ２＋，ＧａＡｉ２＋＋Ａｉ－＝ＧａＡ２＋决定萃取反应速率。阴离子表面活性剂ＳＤＳ、ＡＢＳ均使其正向萃取初始速率降低。对ＨＤＥＨＰ、ＳＤＳ、ＡＢＳ的界面性质进行研究，认为造成正向萃取初始速率降低的原因主要是表面活性剂分子与萃取剂分子在界面上发生竞争吸附，其次可能是表面活性剂的加入导致了分子在界面膜上排列更致密和界面膜增厚，产生了更大的传质阻力。
The kinetics of the extraction of Ga (Ⅲ) from dihydrochloride (HDEHP, HA) in hydrochloric acid was studied by the growth drop method. The results show that the two-step continuous reaction occurs in the interface region: Ga3 ++ Ai- = GaAi2 +, GaAi2 ++ Ai- = GaA2 + determines the extraction reaction rate. Anionic surfactants SDS and ABS reduced the initial rate of extraction. The interfacial properties of HDEHP, SDS and ABS were studied. It is considered that the reason for the decrease of the initial rate of the forward extraction is that the surfactant molecule and the extractant molecules are competitively adsorbed at the interface, and the second possibility is that the addition of the surfactant leads to the formation of the molecule The arrangement of the interface film is more dense and the interface film is thicker, resulting in greater mass transfer resistance.